Defect Reactions at Metal-Semiconductor and Semiconductor-Semiconductor Interfaces

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

S. Tongay, M. Lemaitre, X. Miao, B. Gila, B. R. Appleton, and A. F. Hebard Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA Department of Physics, University of Florida, Gainesville, Florida 32611, USA Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32611, USA (Received 24 May 2011; published 17 J...

Ultrafast direct electron transfer at organic semiconductor and metal interfaces

The ability to control direct electron transfer can facilitate the development of new molecular electronics, light-harvesting materials, and photocatalysis. However, control of direct electron transfer has been rarely reported, and the molecular conformation-electron dynamics relationships remain unclear. We describe direct electron transfer at buried interfaces between an organic polymer semic...

Photoemission Studies of Metal-semiconductor Interfaces

Metal-Semiconductor Interfaces in Thin-Film Transistors

The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is...

Chemical tuning of metal-semiconductor interfaces.

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height i...